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this is information on a product in full production. august 2012 doc id 9567 rev 7 1/22 22 stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z n-channel 800 v, 0.65 typ., 10.5 a zener-protected supermesh? power mosfet in d 2 pak, to-220fp, to-220 and to-247 datasheet ? production data features extremely high dv/dt capability improved esd capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing reliability applications switching applications description these devices are n-channel zener-protected power mosfets developed using stmicroelectronics' supermesh? technology, achieved through optimization of st's well established strip-based powermesh? layout. in addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) i d p w stb12nk80z 800v <0.75 10.5 a 190w STF12NK80Z 800v <0.75 10.5 a 40w stp12nk80z 800v <0.75 10.5 a 190w stw12nk80z 800v <0.75 10.5 a 190w to-220 to-247 d 2 pak 1 3 tab 1 2 3 tab 1 2 3 to-220fp d(2,tab) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging stb12nk80z 12nk80z d 2 pak tape and reel STF12NK80Z 12nk80z to-220fp tube stp12nk80z 12nk80z to-220 tube stw12nk80z 12nk80z to-247 tube www.st.com
contents stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z 2/22 doc id 9567 rev 7 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z electrical ratings doc id 9567 rev 7 3 /22 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak to-220 to-247 to-220fp v ds drain-source voltage (v gs = 0) 800 v v dgr drain-gate voltage (r gs = 20k ) 800 v v gs gate-source voltage 3 0v i d drain current (continuous) at t c = 25c 10.5 10.5 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c =100c 6.6 6.6 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 42 42 (1) a p tot total dissipation at t c = 25c 190 40 w derating factor 1.52 0. 3 2w/c vesd(g-s) g-s esd (hbm c= 100pf, r= 1.5k )4kv v iso insulation withstand voltage (dc) -- 2500 v dv/dt ( 3 ) 3 .i sd 10.5 a, di/dt 200a/s, v dd v (br)dss , t j t jmax peak diode recovery voltage slope 4.5 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit to-220/ d2pak to-220fp to-247 r thj-case thermal resistance junction-case max 0.66 3 .1 0.66 c/w r thj-a thermal resistance junction-ambient max 62.5 50 c/w
electrical ratings stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z 4/22 doc id 9567 rev 7 table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 10.5 a e as single pulse avalanche energy (starting tj=25c, id=iar, vdd=50v) 400 mj
stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z electrical characteristics doc id 9567 rev 7 5/22 2 electrical characteristics (t case =25c unless otherwise specified). table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 800 v i dss peak diode recovery voltage slope v ds = 800 v, v ds =800 v, tc=125c 1 50 a a i gss gate body leakage current (v gs = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100a 33 .75 4.5 v r ds(on) static drain-source on- resistance v gs = 10v, i d = 5.25a 0.65 0.75 table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration= 3 00s, duty cycle 1.5% forward transconductance v ds =15v, i d = 5.25a - 12 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 - 2620 250 5 3 - pf pf pf c osseq (2) 2. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs =0, v ds =0v to 640v - 100 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =640v, i d = 10.5a v gs =10v (see figure 21 ) - 87 14 44 - nc nc nc t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time off-voltage rise time fall time v dd =400 v, i d = 5.25a, r g =4.7 , v gs =10v (see figure 22 ) - 3 0 18 70 20 - ns ns ns ns t r(voff) t f t c off voltage rise time fall time cross-over time v dd =640 v, i d = 10.5a, r g =4.7 , v gs =10v (see figure 22 ) - 16 15 28 - ns ns ns
electrical characteristics stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z 6/22 doc id 9567 rev 7 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 10.5 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 42 a v sd (2) 2. pulsed: pulse duration= 3 00s, duty cycle 1.5% forward on voltage i sd =10.5a, v gs =0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =10.5a, di/dt = 100a/s, v dd =100v, tj=150c - 6 3 5 5.9 18.5 ns c a table 8. gate-source zener diode symbol parameter test conditions min typ. max. unit bv gso gate-source breakdown voltage igs=1ma (open drain) 3 0- - v
stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z electrical characteristics doc id 9567 rev 7 7/22 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 and d2pak figure 3. thermal impedance for to-220 and d2pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 -2 10 -1 10 0 10 2 v d s (v) 10 1 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 10 -1 10 0 10 1 am1474 8 v1
electrical characteristics stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z 8/22 doc id 9567 rev 7 figure 8. output characteristics figure 9. transfer characteristics figure 10. transconductance figure 11. static drain-source on-resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations
stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z electrical characteristics doc id 9567 rev 7 9/22 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. maximum avalanche energy vs temperature
test circuits stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z 10/22 doc id 9567 rev 7 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform
stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z package mechanical data doc id 9567 rev 7 11/22 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack is an st trademark. table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.0 3 0.2 3 b0.70 0.9 3 b2 1.14 1.70 c0.45 0.60 c2 1.2 3 1. 3 6 d8.95 9. 3 5 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1. 3 01.75 r0.4 v2 0 8
package mechanical data stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z 12/22 doc id 9567 rev 7 figure 24. d2pak (to-263) drawing figure 25. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.0 8 1.60 footprint
stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z package mechanical data doc id 9567 rev 7 1 3 /22 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l 3 28.6 3 0.6 l4 9.8 10.6 l5 2.9 3 .6 l6 15.9 16.4 l7 9 9. 3 dia 33 .2
package mechanical data stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z 14/22 doc id 9567 rev 7 figure 26. to-220fp drawing 7012510_rev_k_b
stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z package mechanical data doc id 9567 rev 7 15/22 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 .9 3 l20 16.40 l 3 0 28.90 ? p 3 .75 3 .85 q2.65 2.95
package mechanical data stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z 16/22 doc id 9567 rev 7 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z package mechanical data doc id 9567 rev 7 17/22 table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3 .0 3 .40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e5. 3 05.455.60 l 14.20 14.80 l1 3 .70 4. 3 0 l2 18.50 ? p 3 .55 3 .65 ? r 4.50 5.50 s5. 3 05.505.70
package mechanical data stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z 18/22 doc id 9567 rev 7 figure 28. to-247 drawing 0075325_g
stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z packaging mechanical data doc id 9567 rev 7 19/22 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 33 0 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 1 3 .2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 3 0.4 p0 3 .9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t0.25 0. 3 5 w2 3 .7 24. 3
packaging mechanical data stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z 20/22 doc id 9567 rev 7 figure 29. tape reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z revision history doc id 9567 rev 7 21/22 6 revision history table 14. document revision history date revision changes 22-jun-2004 2 preliminary version. 28-jan-2005 3 complete version. 08-sep-2005 4 figure 2 and figure 6 changed. 3 1-jul-2006 5 the document has been reformatted. 27-apr-2007 6 modified r ds(on) value on ta bl e 5 . 28-aug-2012 7 inserted new device in to-220fp. updated table 1: device summary , table 2: absolute maximum ratings and table 3: thermal data . updated section 4: package mechanical data and section 5: packaging mechanical data . minor text changes in the cover page.
stb12nk80z, STF12NK80Z, stp12nk80z, stw12nk80z 22/22 doc id 9567 rev 7 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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